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Issue Date	Title / Author(s) / Citation	File	Altmetrics
2019-02	A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts Liu, Xi; Xia, Zhengliang; Jin, Xiaoshi; Lee, Jong-Ho Nanoscale Research Letters. 2019 Feb 04;14(1):43	view file DOI