Variation-awae design and packaging techniques in 3D ICs

Abstract

As CMOS scaling down, The control of variation in chip performance (i.e. speed and power) becomes highly important to improve the chip yield. The increased variation of chip performance demands additional design efforts such as the increase of guard-band or longer design turnaround time (TAT), which cause degradation of both chip performance and economic profit. Meanwhile, through-silicon via (TSV) based 3D technology has been regarded as the promising solution for long interconnect wire and huge die size problem. Since a 3D IC is manufactured by stacking multiple dies which are fabricated in different wafers, integration of the dies that have far different process characteristic can enlarge the difference of device performance on different dies within a single chip. In this dissertation, we analyze the effect of on-package (within-chip) variation on 3D IC and presents effective methods to mitigate the onpackage variation. First, a parametric yield improvement method is presented to resolve the mismatches of dies having different process characteristic. Comprehensive 3D integration algorithms considering post-silicon tuning technique is developed for the multi-layered 3D IC. Then, we show that a careful clock edge embedding in 3D clock tree can greatly reduce the impact of on-package variation on 3D clock skew and propose a two-step solution for the problem of on-package variation-aware layer embedding in 3D clock tree synthesis. In summary, this dissertation presents effective 3D integration method and 3D clock tree synthesis algorithm for process-variation tolerant 3D IC designs.