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Deposition behavior and dielectric properties of the Ti-based oxide films for memory devices
메모리 소자에의 적용을 위한 TiO₂박막의 성장 거동 및 특성에 대한 연구

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Authors
김성근
Advisor
황철성
Issue Date
2007
Publisher
서울대학교 대학원
Keywords
TiO2Al-doped TiO2high-kAtomic layer deposition (ALD)O3DRAMcapacitor
Description
학위논문(박사) --서울대학교 대학원 :재료공학부,2007.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042915

http://hdl.handle.net/10371/12645
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
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