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Growth and characterization of alpha-SiC single crystal by physical vapor transport for SiC device application

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author엄명윤-
dc.date.accessioned2009-11-18-
dc.date.available2009-11-18-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000056016eng
dc.identifier.urihttp://hdl.handle.net/10371/12686-
dc.descriptionThesis(doctoral)--서울대학교 대학원 :재료공학부,2004.eng
dc.format.extentxvii, 181 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subjectPhysical Vapor Transport (PVT)eng
dc.subjectPhysical vapor transport (PVT)eng
dc.subject6Heng
dc.subject6H-SiCeng
dc.subject4H-SiCeng
dc.subject4H-SiCeng
dc.subject단결정eng
dc.subjectSingle crystaleng
dc.subject도가니 디자인eng
dc.subjectCrucible designeng
dc.subject결함 passivationeng
dc.subjectDefect passivationeng
dc.subject실시간 erbium 도핑eng
dc.subjectIn situ erbium doped 4H-SiCeng
dc.titleGrowth and characterization of alpha-SiC single crystal by physical vapor transport for SiC device applicationeng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
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