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Growth and characterization of alpha-SiC single crystal by physical vapor transport for SiC device application
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- Authors
- Advisor
- 김형준
- Issue Date
- 2004
- Publisher
- 서울대학교 대학원
- Keywords
- Physical Vapor Transport (PVT) ; Physical vapor transport (PVT) ; 6H ; 6H-SiC ; 4H-SiC ; 4H-SiC ; 단결정 ; Single crystal ; 도가니 디자인 ; Crucible design ; 결함 passivation ; Defect passivation ; 실시간 erbium 도핑 ; In situ erbium doped 4H-SiC
- Description
- Thesis(doctoral)--서울대학교 대학원 :재료공학부,2004.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000056016
https://hdl.handle.net/10371/12686
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