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Fabrication and characterizations of self-aligned poly-Si gate transistors using HfO₂thin films
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- Authors
- Advisor
- 황철성
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- 고유전률 ; High-k ; HfO2 ; HfO2 ; ALD ; ALD ; 원료물질 ; precursors ; 산화제 ; oxidants ; 신뢰성 ; reliability ; MOSFET ; MOSFET ; 누설전류기구 ; leakage current mechanism ; 계면트랩 ; interface trap density ; 전하이동도 ; channel mobility
- Description
- Thesis(doctoral)--서울대학교 대학원 :재료공학부,2005.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050054
https://hdl.handle.net/10371/12734
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