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(The)Growth of In(Ga)NGaN nanostructures by metalorganic chemical vapor deposition : 유기금속기상화학증착법을 이용한 In(Ga)NGaN 나노구조 성장
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2004
- Publisher
- 서울대학교 대학원
- Keywords
- 유기금속기상화학증착법 (MOCVD) ; Metalorganic chemical vapor deposition (mocvd) ; GaN ; Gan ; InGaN ; Ingan ; InN ; Inn ; 나노구조 ; Nanostructure ; 양자점 ; Quantum dot (qd) ; 양자우물 ; Quantum well (qw) ; 암모니아 가열기 ; Ammonia preheater ; 성장정지 ; Growth interruption (gi)
- Description
- Thesis (doctoral)--서울대학교 대학원 :재료공학부,2004.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000053661
https://hdl.handle.net/10371/12802
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