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Atomic layer deposition of high-k HfO2 using Hf(O-iPr)4 and Hf(NMe2)4 as Hf precursors : Hf(O-iPr)4 와 Hf(NMe2)4를 Hf 전구체로 사용한 고유전 HfO2의 원자층증착
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- Authors
- Advisor
- 문상흡
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Keywords
- 하프늄 산화물 ; hafnium oxide ; 원자층 증착 ; atomic layer deposition ; 유전물질 ; dielectric ; 게이트 산화물 ; gate oxide ; 이소프로폭사이드 ; isopropoxide ; 디메틸아민 ; dimethylamine
- Description
- Thesis(doctors) --서울대학교 대학원 :화학생물공학부,2009.8.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038228
https://hdl.handle.net/10371/12992
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