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(A) novel cyclic depositionetching process to obtain bowing-free SiO2 contact holes : 산화막 콘택홀의 벽면 벌어짐 현상을 개선하기 위한 새로운 식각 공정의 개발
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- Authors
- Advisor
- 문상흡
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Keywords
- 산화막 ; Bowing ; 콘택홀 ; Necking ; 벽면 벌어짐 ; contact hole ; plasma etching ; C4F6
- Description
- Thesis(doctors) --서울대학교 대학원 :화학생물공학부,2009.8.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038234
https://hdl.handle.net/10371/12995
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