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(A)Study on the reduction of the leakage current in MILC Poly-Si TFT : 금속유도측면결정화에 의한 다결정질 실리콘 박막 트랜지스터의 누설 전류 감소에관한 연구
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- Authors
- Advisor
- 주승기
- Issue Date
- 2007
- Publisher
- 서울대학교 대학원
- Keywords
- 금속유도측면결정화 (MILC) ; metal-induced lateral crystallization (MILC) ; 다결정질 실리콘 (poly-Si) ; polycrystalline silicon (poly-Si) ; 전기적 스트레스 (Electrical Stressing) ; Leakage current ; 박막 트랜지스터 (TFT) ; Electrical Stressing ; 수소 열처리 ; thin film transistor (TFT) ; gate-overlapped Lightly Doped Drain (GOLDD) ; H2 annealing ; Gate-Overlapped Lightly Doped Drain (GOLDD)
- Description
- Thesis(doctor`s)--서울대학교 대학원 :재료공학부,2007.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000045090
https://hdl.handle.net/10371/13512
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