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Phase change characteristics of new chalcogenide materials for phase change random access memory application
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- Authors
- Advisor
- 김형준
- Issue Date
- 2008
- Publisher
- 서울대학교 대학원
- Keywords
- Ge2Sb2Te5 ; Ge2Sb2Te5 ; PRAM ; PRAM ; Nitrogen doped Sb2Te3 ; Nitrogen doped Sb2Te3 ; Bi2Te3 incorporated Ge2Sb2Te5 ; Bi2Te3 incorporated Ge2Sb2Te5 ; Ge-Bi-Te ; Ge-Bi-Te ; New SET operation pulse ; New SET operation pulse
- Description
- Thesis(doctors)--서울대학교 대학원 :재료공학부,2008.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039471
https://hdl.handle.net/10371/13570
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