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In-situ analysis of In(Ga)As layer growth by spectral reflectance : Spectral reflectance를 이용한 In(Ga)As층 성장의 실시간 분석
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2007
- Publisher
- 서울대학교 대학원
- Keywords
- 유기금속 화학기상 증착법 (MOCVD) ; Metalorganic chemical vapor deposition (MOCVD) ; spectral reflectance (SR) ; spectral reflectance (SR) ; 실시간모니터링 ; in-situ monitoring ; InAs ; epitaxial growth ; InGaAs ; InAs ; GaAs ; InGaAs ; InP ; GaAs ; ZnO ; InP ; multibeam optical stress sensor (MOSS) ; ZnO ; 자발형성 양자점 (SAQD) ; surface reconstruction ; InP ; surface reaction ; InGaAs ; multibeam optical stress sensor (MOSS) ; GaAs ; self-assembled quantum dots (SAQD) ; InP ; photoluminescence (PL) ; ZnO ; atomic force microscopy (AFM) ; 표면 reconstruction ; reflectance anisotropy spectroscopy (RAS) ; 표면 반응 ; surface photoabsorption (SPA) ; 다중빔광학 응력측정기 (MOSS) ; 원자전자현미경 (AFM) ; reflectance anisotropy spectroscopy (RAS) ; surface photoabsorption (SPA)
- Description
- 학위논문(박사) --서울대학교 대학원 :재료공학부,2007.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042914
https://hdl.handle.net/10371/13584
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