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Photoconductivity and Optical Conductivity in Lightly Doped Nd2CuO4-d

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dc.contributor.authorYu, G.-
dc.contributor.authorLee, C. H.-
dc.contributor.authorHeeger, A. J.-
dc.contributor.authorCheong, S. W.-
dc.date.accessioned2009-11-19-
dc.date.available2009-11-19-
dc.date.issued1992-
dc.identifier.citationPhysica C 203 (1992) 419en
dc.identifier.issn0921-4534-
dc.identifier.urihttp://hdl.handle.net/10371/13603-
dc.description.abstractThe photoconductivity, σph(ω), and the optical conductivity, σ(ω), of lightly-doped single crystals of Nd2CuO4−δ are compared over the photon energy range . We find that σph(ω) and σ(ω) exhibit a common edge at the charge transfer energy gap, 1.2 eV, with no indication of a significant exciton binding energy. At higher photon energies, σph(ω) follows σ(ω). At energies below the charge transfer transition, a broad spectral feature is observed in σ(ω), centered at 0.6 0.7 eV. This feature is suppressed in σph(ω), which shows a weak and relatively narrow peak at 0.7 eV at relevant temperatures. The discrepancies between σph(ω) and σ(ω) in the infrared spectral region provide evidence that the states in the CT band tails and the broad, doping-induced gap states in the CuO2 layers are localized.en
dc.language.isoenen
dc.publisherElsevieren
dc.titlePhotoconductivity and Optical Conductivity in Lightly Doped Nd2CuO4-den
dc.typeArticleen
dc.identifier.doi10.1016/0921-4534(92)90051-D-
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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