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Deep Blue Light-Emitting Diodes Based on Cd1-xZnxS@ZnS Quantum Dots

Cited 49 time in Web of Science Cited 54 time in Scopus
Authors
Bae, Wan Ki; Lim, Jaehoon; Char, Kookheon; Kwak, Jeonghun; Lee, Donggu; Lee, Changhee; Nam, MinKi; Lee, Seonghoon
Issue Date
2009-02-18
Publisher
Institute of Physics
Citation
Nanotech. 20 075202
Abstract
We demonstrate deep blue light-emitting diodes based on chemically synthesized
Cd1−xZnxS@ZnS quantum dots (QDs). Composite films of poly-(N,N -bis(4-butylphenyl)-
N,N -bis(phenyl)benzidine) (poly-TPD) and 4,4 , N,N -diphenylcarbazole (CBP) are
employed for facilitated hole injection into Cd1−xZnxS@ZnS QDs and uniform QD deposition.
The fabricated devices possess moderate turn-on voltage (6 V) and external quantum efficiency
(0.1–0.3%), and exhibit color-saturated blue emission with a narrow spectral bandwidth of full
width at half maximum <25 nm (Commission Internationale de l’Eclairage (CIE) coordinates
of (0.169, 0.024) and (0.156, 0.028) for devices with electroluminescence (EL) λmax at 434 and
454 nm, respectively). Most of the emission originates from the Cd1−xZnxS@ZnS QD layers
(99% of the total EL emission).
ISSN
0957-4484
Language
English
URI
http://hdl.handle.net/10371/13618
DOI
https://doi.org/10.1088/0957-4484/20/7/075202
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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