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Deposition behaviors of Ru thin films prepared by chemical vapor deposition and their application to the electrodes of the DRAM devices

DC Field Value Language
dc.contributor.advisor김형준-
dc.contributor.author강상열-
dc.date.accessioned2009-11-19T05:37:58Z-
dc.date.available2009-11-19T05:37:58Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055983eng
dc.identifier.urihttps://hdl.handle.net/10371/13644-
dc.descriptionThesis(doctoral)--서울대학교 대학원 :재료공학부,2004.eng
dc.format.extentxiii, 161 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subjectRueng
dc.subjectRueng
dc.subject유기금속화학증착eng
dc.subjectMOCVDeng
dc.subjectPt-doped Rueng
dc.subjectPt-doped Rueng
dc.subjectRueng
dc.subjectRueng
dc.subjectTiNeng
dc.subjectTiNeng
dc.subject결정립성장eng
dc.subjectgrain growtheng
dc.subject열적안정성eng
dc.subjectthermal stabilityeng
dc.titleDeposition behaviors of Ru thin films prepared by chemical vapor deposition and their application to the electrodes of the DRAM deviceseng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoreng
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