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Spin-coated Ga-doped ZnO transparent conducting thin films for organic light-emitting diodes

Cited 104 time in Web of Science Cited 141 time in Scopus
Authors
Nayak, Pradipta K; Yang, Jihoon; Kim, Jinwoo; Chung, Seungjun; Jeong, Jaewook; Lee, Changhee; Hong, Yongtaek
Issue Date
2009-02-07
Publisher
Institute of Physics
Citation
J. Phys. D: Appl. Phys. 42 035102
Abstract
Gallium doped zinc oxide (GZO) thin films have been prepared by a simple sol–gel spin coating technique. XRD results showed the preferential c-axis orientation of the crystallites and the presence of the wurtzite phase of ZnO. A lowest resistivity of 3.3 × 10−3 Ω cm was obtained for the ZnO film doped with 2 at% of Ga after post-annealing at 500 °C for 45 min in a H2 atmosphere. All the films showed more than 80% of transparency in the entire visible region. Blue shifting of the optical band gap was observed with an increase in Ga doping, which can be explained on the basis of the Burstein–Moss effect. OLED devices were fabricated using 2 at% Ga-doped ZnO thin films as anodes. Preliminary results obtained demonstrated that spin-coated GZO films can be used as a promising TCO for optoelectronic device applications.
ISSN
0022-3727
Language
English
URI
http://hdl.handle.net/10371/13647
DOI
https://doi.org/10.1088/0022-3727/42/3/035102
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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