SHERP

Preparation of Light-Emitting Devices with Poly(p-Phenylenevinylene): Effects of Thermal Elimination Conditions and Polymer Layer Thickness on Device Performance

Cited 0 time in webofscience Cited 0 time in scopus
Authors
Seoul, Chang; Kang, Jae Ick; Mah, Souk Il; Lee, Changhee
Issue Date
1999-01-29
Publisher
Elsevier
Citation
Synth. Met. 99 (1999) 35
Keywords
PolymerLight emitting diodePoly(p-phenylene vinylene)Thermal elimination conditionsExternal quantum efficiencyBrightnessDegree of conversionPrecursor filmElectroluminescence
Abstract
The optimum thermal elimination conditions for poly(p-phenylene vinylene) light-emitting diodes were sought. The precursor films should be heated to 230°C and kept at this temperature for 5 min under a N2 flow of 50 ml/min. By the heat treatment the degree of conversion to PPV was about 70%. A method determining the degree of conversion to PPV was proposed with IR measurement. About 8% of the THT resides in the fully converted PPV. A high external quantum efficiency of 0.0078% was achieved for the ITO/partially converted PPV/Al devices. The optimum thickness for the partially converted PPV layer as a electroluminescent was about 150 nm.
ISSN
0379-6779
Language
English
URI
http://hdl.handle.net/10371/13653
DOI
https://doi.org/10.1016/S0379-6779(98)00197-0
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse