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Optimization of white organic light emitting diodes based on emitting layer charge carrier conduction properties

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dc.contributor.authorBaek, H. I.-
dc.contributor.authorLee, Changhee-
dc.date.accessioned2009-11-19T22:31:42Z-
dc.date.available2009-11-19T22:31:42Z-
dc.date.issued2008-
dc.identifier.citationJ. Appl. Phys. D: Appl. Phys. 41 105101en
dc.identifier.issn0022-3727-
dc.identifier.urihttps://hdl.handle.net/10371/13663-
dc.description.abstractWe have fabricated white organic light emitting diodes (OLEDs) with multi-emitting layer (EML) structures in which 4,4'-N,N'-dicarbazole-biphenyl (CBP) layers doped with the phosphorescent dopants fac-tris(2-phenylpyridine) iridium (Ir(ppy)3) and bis(2-(2'-benzo[4,5-a]thienyl)pyridinato-N,C3')iridium(acetylacetonate) (btp2Ir(acac)) and the fluorescent dopant 4,4'-bis[2-{4-(N,N-diphenylamino) phenyl}vinyl]biphenyl (DPAVBi) were used as green (G), red (R) and blue (B) EMLs, respectively. A higher efficiency was expected with the R/G/B EML sequence from the hole transport layer interface than with the G/R/B sequence because of the differences in the charge carrier conduction properties of the EMLs doped with phosphorescent dopants and the luminance balance between the phosphorescent and fluorescent emissions. A high efficiency of 18.3 cd A−1 (an external quantum efficiency of 8.5%) at 100 cd m−2 and good colour stability were achieved with the R/G/B EML sequence as expected, with an additional non-doped CBP interlayer used between the G and B EMLs. In addition, the OLED with this sequence was found to have the longest lifetime of the white devices we tested.en
dc.language.isoenen
dc.publisherIOP Scienceen
dc.titleOptimization of white organic light emitting diodes based on emitting layer charge carrier conduction propertiesen
dc.typeArticleen
dc.contributor.AlternativeAuthor이창희-
dc.identifier.doi10.1088/0022-3727/41/10/105101-
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