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Photo-excitation of Single-Crystals of La2CuO4+d Near the Metal-Insulator-Transition

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dc.contributor.authorYu, G.-
dc.contributor.authorLee, Changhee-
dc.contributor.authorHeeger, A. J.-
dc.contributor.authorCheong, S. W.-
dc.contributor.authorFisk, Z.-
dc.date.accessioned2009-11-19T22:38:50Z-
dc.date.available2009-11-19T22:38:50Z-
dc.date.issued1992-
dc.identifier.citationPhysica C 190 (1992) 563en
dc.identifier.issn0921-4534-
dc.identifier.urihttps://hdl.handle.net/10371/13664-
dc.description.abstractTransient photoconductivity (σph) experiments have been carried out in single crystals of insulating La2CuO4+δ near the metal-insulator transition (δ≈ 1–2%). The time evolution of the σph changes dramatically with light intensity (IL). At low IL, σph is characterized by power law time decay, t−α, in the nanosecond time regime, and the exponent, α, decreases significantly with increasing IL. As IL increases to 5 × 1015 photons/cm2, σph reaches 15 S/cm, and the lifetime of the conducting state is enhanced by more than two orders of magnitude: σph exhibits a delayed peak centered at approximately 30 ns. followed by exponential decay with time constant of 360 ns. The data reveal a continuous distribution of localized electronic states above the (hole) mobility edge; the M-I transition is achieved when the Fermi level is shifted away from the localized states and across the mobility edge either by chemical dopiing or by photo-excitation. The time of σph at high IL implies the formation of metastable metallic droplets after photo-excitation.en
dc.language.isoenen
dc.publisherElsevieren
dc.titlePhoto-excitation of Single-Crystals of La2CuO4+d Near the Metal-Insulator-Transitionen
dc.typeArticleen
dc.contributor.AlternativeAuthor이창희-
dc.identifier.doi10.1016/0921-4534(92)90719-S-
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