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Low driving voltage and long lifetime organic light-emitting diodes with molybdenum oxide (MoO3) doped hole transport layer

Cited 8 time in Web of Science Cited 8 time in Scopus
Authors
Yun, Jinyoung; Yang, Jungjin; Hong, Yongtaek; Lee, Changhee; Song, Won Jun; Sung, Yeun Joo
Issue Date
2008
Publisher
한국물리학회 = The Korean Physical Society
Citation
J. Korean Phys. Soc. 53, 1660
Keywords
OLEDsMoO3Dopingp-doped hole transport layer
Abstract
We report low-operating-voltage, long-lifetime organic light-emitting diodes (OLEDs) with a molybdenum-oxide (MoO$_3$)-doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine ($\alpha$-NPD) layer between the indium tin oxide and the $\alpha$-NPD. The current density-voltage-luminance characteristics and the lifetime were studied for various MoO$_3$ doping concentrations and thicknesses. The devices with $\alpha$-NPD layers of various MoO$_3$ doping concentrations and thicknesses exhibited lower driving voltage and higher power efficiency compared with the undoped devices. Furthermore, the device with MoO$_3$-doped hole transport layer showed a longer lifetime and a much reduced operational voltage variation. The optical absorption spectra of the MoO$_3$-doped $\alpha$-NPD layer showed two new peaks, around 500 and 1400 nm, indicating that charge transfer complexes had formed between MoO$_3$ and $\alpha$-NPD. The p-type doping of $\alpha$-NPD by MoO$_3$ improved hole injection. In addition, AFM images show that the morphology of the MoO$_3$-doped $\alpha$-NPD layer improved with increasing MoO$_3$ doping concentration. Therefore, the improved device performance can be attributed to the higher hole-injection efficiency and the improved morphology of the MoO$_3$-doped $\alpha$-NPD layer.
ISSN
0374-4884 (Print)
1976-8524 (Online)
Language
English
URI
http://hdl.handle.net/10371/13786
DOI
https://doi.org/10.3938/jkps.53.1660
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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