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Electroluminescence characteristics of n-type matrix materials doped with iridium-based green and red phosphorescent emitters

Cited 30 time in Web of Science Cited 28 time in Scopus
Authors
Baek, Heume-Il; Lee, Changhee
Issue Date
2008
Publisher
American Institute of Physics
Citation
J. Appl. Phys. 103, 054510
Abstract
The electroluminescence characteristics of various n-type matrix materials with various orders of
electron mobility doped with the phosphorescent green emitter fac-tris 2-phenylpyridine
iridium III Ir ppy 3 and the phosphorescent red emitter bis 2- 2 -benzo 4,5-a
thienyl pyridinato-N,C3 iridium acetyl-acetonate btp2Ir acac were evaluated and compared to
those of the p-type 4,4 -N,N -dicarbazole-biphenyl CBP reference matrix. For Ir ppy 3, the
device with the n-type matrix 1,3,5-tris N-phenylbenzimidazol-2-yl benzene was found to have the
highest efficiency and operational lifetime, whereas for btp2Ir acac the device with the p-type
matrix CBP was found to have the highest efficiency. Our study of hole- and electron-dominant
devices and analyses of electroluminescence spectra show that the main recombination zone
position and the electron-hole balance change as the matrix material changes, resulting in changes
in the characteristics of the organic light emitting diodes.
ISSN
0021-8979
Language
English
URI
http://hdl.handle.net/10371/13800
DOI
https://doi.org/10.1063/1.2890399
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
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