High-precision Submicron Patterning of Organic-Inorganic Hybrid Perovskite Thin Film with Minimizing Edge Effect

Abstract

Organic-inorganic hybrid perovskite materials have got into the spotlight for their remarkable optoelectronic performance. They are expected to replace the photoactive layer in commercial silicon-based opotoelectronic devices such as solar cell and photodetector. However, their weak stability in various solvents makes them incompatible with conventional photolithography process, which is highly desirable for solution-processed device array. Although some research groups reported patterning methods to solve this problem, they are suffering from low patterning yield and low patterning quality at the pattern edge. Here, I propose a new patterning method of CH3NH3PbI3 by employing SiO2 trench and dodecyltrichlorosilane, which minimizes shrinkage of CH3NH3PbI3 near the pattern edge and makes it possible to realize submicron pattern of CH3NH3PbI3 thin film. As a demonstration, Au/CH3NH3PbI3/Au photoresistor type photodetector was fabricated by the proposed method. This patterning method provides a new potential for fine-patterned organic-inorganic hybrid material based device.