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Epitaxial growth of InN on GaN by MOCVD and analysis of structural and optical properties : 유기금속화학기상증착법을 이용한 GaN 위에 InN의 성장과 성장된 InN의 구조적, 광학적 특성분석

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dc.contributor.advisor윤의준-
dc.contributor.author김봉구-
dc.date.accessioned2009-11-24T03:18:40Z-
dc.date.available2009-11-24T03:18:40Z-
dc.date.copyright2005.-
dc.date.issued2005-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051024eng
dc.identifier.urihttps://hdl.handle.net/10371/14322-
dc.descriptionThesis(master`s)--서울대학교 대학원 :재료공학부,2005.eng
dc.format.extentvii, 46 leaveseng
dc.language.isoeneng
dc.publisher서울대학교 대학원eng
dc.subjectMOCVDeng
dc.subjectMOCVDeng
dc.subjectInNeng
dc.subjectInNeng
dc.subject저온완충막eng
dc.subjectlow temperature buffer layereng
dc.subjectPLeng
dc.subjectPLeng
dc.subjectXRDeng
dc.subjectXRDeng
dc.subjectSEMeng
dc.subjectSEMeng
dc.subjectTEMeng
dc.subjectTEMeng
dc.titleEpitaxial growth of InN on GaN by MOCVD and analysis of structural and optical propertieseng
dc.title.alternative유기금속화학기상증착법을 이용한 GaN 위에 InN의 성장과 성장된 InN의 구조적, 광학적 특성분석eng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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