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(The)Epitaxial growth and characterizations of In-rich InGaN by metalorganic chemical vapor deposition

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author신유리-
dc.date.accessioned2009-11-24T03:26:39Z-
dc.date.available2009-11-24T03:26:39Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055681eng
dc.identifier.urihttps://hdl.handle.net/10371/14348-
dc.descriptionThesis(master`s)--서울대학교 대학원 :재료공학부,2004.eng
dc.format.extentvii, 46 leaveseng
dc.language.isoen-
dc.publisher서울대학교 대학원eng
dc.subject높은 In 조성eng
dc.subjectMOCVDeng
dc.subjectInGaNeng
dc.subjectInGaNeng
dc.subject유기화학증착법eng
dc.subjectIn-richeng
dc.subject조성불균일eng
dc.subjectcompositional fluctuationeng
dc.subject상분리eng
dc.title(The)Epitaxial growth and characterizations of In-rich InGaN by metalorganic chemical vapor depositioneng
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMastereng
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