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상변화 메모리의 기억 재료인 붕소가 주입된 Ge2Sb5Te5[실제는 Ge2Sb2Te5]의 특성에 관한 연구 : (A)Study on the characteristics of the boron doped Ge2Sb2Te5 as memory element for phase change random access memory
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- Authors
- Advisor
- 김기범
- Issue Date
- 2005
- Publisher
- 서울대학교 대학원
- Keywords
- PRAM ; PRAM ; reset 전류 ; reset current ; 붕소가 주입된 Ge2Sb2Te5 ; boron doped Ge2Sb2Te5 ; co sputtering ; co sputtering ; AES ; AES ; 비저항 ; resistivity ; 결정화 온도(Tx) ; crystallization temperature (Tx) ; 결정립 크기 ; grain size.
- Description
- 학위논문(석사)--서울대학교 대학원 :재료공학부,2005.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000051029
https://hdl.handle.net/10371/14349
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