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Two-step epitaxial Ge growth on Si(100) using UHV-CVD : 초고진공 화학기상증착법을 이용한 실리콘 (100) 기판 위의 이단계 게르마늄 에피성장
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 윤의준 | - |
| dc.contributor.author | 신건욱 | - |
| dc.date.accessioned | 2009-11-25 | - |
| dc.date.available | 2009-11-25 | - |
| dc.date.copyright | 2009. | - |
| dc.date.issued | 2009 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000036876 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/14902 | - |
| dc.description | Thesis(masters) --서울대학교 대학원 :재료공학부, 2009.2. | eng |
| dc.format.extent | 47 leaves | eng |
| dc.language.iso | en | - |
| dc.publisher | 서울대학교 대학원 | eng |
| dc.subject | 게르마늄 | eng |
| dc.subject | Ge | eng |
| dc.subject | 이단계 성장법 | eng |
| dc.subject | UHV-CVD | eng |
| dc.subject | 초고진공 화학기상증착법 | eng |
| dc.subject | two-step growth | eng |
| dc.subject | 저온 | eng |
| dc.subject | low temperature | eng |
| dc.title | Two-step epitaxial Ge growth on Si(100) using UHV-CVD | eng |
| dc.title.alternative | 초고진공 화학기상증착법을 이용한 실리콘 (100) 기판 위의 이단계 게르마늄 에피성장 | eng |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Master | eng |
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