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CMOS 소자의 게이트 산화막을 위한 Lanthanum Silicate막의 원자층 증착과 전기적 특성 : Atomic layer deposition and electric properties of Lanthanum Silicate films for gate oxide of CMOS devices
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- Authors
- Advisor
- 김형준
- Issue Date
- 2009
- Publisher
- 서울대학교 대학원
- Description
- 학위논문(석사) --서울대학교 대학원 :재료공학부,2009.8.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000038687
https://hdl.handle.net/10371/15005
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