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Light and temperature effects on negative bias-induced instability of HfInZnO amorphous oxide thin film transistor : HfInZnO로 구성된 산화물 박막 소자의 전압, 빛, 온도에 의한 전기적 특성 변화
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- Authors
- Advisor
- 박병국
- Major
- 나노융합학과
- Issue Date
- 2011-02
- Publisher
- 서울대학교 대학원
- Keywords
- HIZO 박막소자의 전기적 특성변화 ; 빛에 의한 전기적 특성변화 ; 온도변화로 인한 전기적 특성변화 ; Instability of HIZO TFT ; Bias-induced instability of HIZO TFT ; Temperature dependence of HIZO TFT ; Light-induced instability of HIZO TFT
- Description
- 학위논문 (석사)-- 서울대학교 대학원 : 나노융합학과, 2011.2. 박병국.
- Language
- eng
- URI
- https://hdl.handle.net/10371/157442
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000030645
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