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Design and fabrication of vertical GaN power diodes : 수직형 질화갈륨 전력용 다이오드의 설계 및 제작

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Authors

임지용

Advisor
한민구
Major
전기·컴퓨터공학부
Issue Date
2011-02
Publisher
서울대학교 대학원
Keywords
GaNSchottky barrier diode (SBD)PiN diodeLeakage currentBreakdown voltagep-type implantationElectric field concentrationAnnealingfield platefloating metal ringp-type guard ring
Description
학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2011.2. 한민구.
Language
eng
URI
https://hdl.handle.net/10371/159072

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