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Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory

Cited 72 time in Web of Science Cited 78 time in Scopus
Authors
Son, Donghee; Chae, Sue In; Kim, Myungbin; Choi, Moon Kee; Yang, Jiwoong; Park, Kunsu; Kale, Vinayak S.; Koo, Ja Hoon; Choi, Changsoon; Lee, Minbaek; Kim, Ji Hoon; Hyeon, Taeghwan; Kim, Dae-Hyeong
Issue Date
2016-11
Citation
Advanced Materials, Vol.28 No.42, pp.9326-9332
Keywords
colloidal synthesisflexible electronicsMoS2 nanosheetsresistive random access memory
Abstract
Large-scale colloidal synthesis and integration of uniform-sized molybdenum disulfi de (MoS2) nanosheets for a fl exible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nano sheets shows a approximate to 10 000 times higher on/off ratio than that based on exfoliated MoS2. The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes.
ISSN
0935-9648
URI
http://hdl.handle.net/10371/164308
DOI
https://doi.org/10.1002/adma.201602391
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Chemical Convergence for Energy and Environment (에너지환경 화학융합기술전공)Journal Papers (저널논문_에너지환경 화학융합기술전공)
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