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Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Cited 32 time in Web of Science Cited 40 time in Scopus
Authors
Kim, Dae-Hyeong; Choi, Won Mook; Ahn, Jong-Hyun; Kim, Hoon-Sik; Song, Jizhou; Huang, Yonggang; Liu, Zhuangjian; Lu, Chun; Koh, Chan Ghee; Rogers, John A.
Issue Date
2008-08
Citation
Applied Physics Letters, Vol.93 No.4, p. 044102
Abstract
Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems. © 2008 American Institute of Physics.
ISSN
0003-6951
URI
http://hdl.handle.net/10371/164344
DOI
https://doi.org/10.1063/1.2963364
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Chemical Convergence for Energy and Environment (에너지환경 화학융합기술전공)Journal Papers (저널논문_에너지환경 화학융합기술전공)
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