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Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dae-Hyeong | - |
dc.contributor.author | Choi, Won Mook | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.contributor.author | Kim, Hoon-Sik | - |
dc.contributor.author | Song, Jizhou | - |
dc.contributor.author | Huang, Yonggang | - |
dc.contributor.author | Liu, Zhuangjian | - |
dc.contributor.author | Lu, Chun | - |
dc.contributor.author | Koh, Chan Ghee | - |
dc.contributor.author | Rogers, John A. | - |
dc.date.accessioned | 2020-02-17T04:32:06Z | - |
dc.date.available | 2020-02-17T04:32:06Z | - |
dc.date.created | 2018-07-02 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.citation | Applied Physics Letters, Vol.93 No.4, p. 044102 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 38439 | - |
dc.identifier.uri | https://hdl.handle.net/10371/164344 | - |
dc.description.abstract | Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems. © 2008 American Institute of Physics. | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.2963364 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
dc.identifier.wosid | 000258179800138 | - |
dc.identifier.scopusid | 2-s2.0-49149102963 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 044102 | - |
dc.citation.volume | 93 | - |
dc.identifier.sci | 000258179800138 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kim, Dae-Hyeong | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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