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A Physically Transient Form of Silicon Electronics

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dc.contributor.authorHwang, Suk-Won-
dc.contributor.authorTao, Hu-
dc.contributor.authorKim, Dae-Hyeong-
dc.contributor.authorCheng, Huanyu-
dc.contributor.authorSong, Jun-Kyul-
dc.contributor.authorRill, Elliott-
dc.contributor.authorBrenckle, Mark A.-
dc.contributor.authorPanilaitis, Bruce-
dc.contributor.authorWon, Sang Min-
dc.contributor.authorKim, Yun-Soung-
dc.contributor.authorSong, Young Min-
dc.contributor.authorYu, Ki Jun-
dc.contributor.authorAmeen, Abid-
dc.contributor.authorLi, Rui-
dc.contributor.authorSu, Yewang-
dc.contributor.authorYang, Miaomiao-
dc.contributor.authorKaplan, David L.-
dc.contributor.authorZakin, Mitchell R.-
dc.contributor.authorSlepian, Marvin J.-
dc.contributor.authorHuang, Yonggang-
dc.contributor.authorOmenetto, Fiorenzo G.-
dc.contributor.authorRogers, John A.-
dc.date.accessioned2020-02-17T04:35:43Z-
dc.date.available2020-02-17T04:35:43Z-
dc.date.created2018-06-29-
dc.date.issued2012-09-
dc.identifier.citationScience, Vol.337 No.6102, pp.1640-1644-
dc.identifier.issn0036-8075-
dc.identifier.other38390-
dc.identifier.urihttps://hdl.handle.net/10371/164364-
dc.description.abstractA remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.-
dc.language영어-
dc.publisherAmerican Association for the Advancement of Science-
dc.titleA Physically Transient Form of Silicon Electronics-
dc.typeArticle-
dc.identifier.doi10.1126/science.1226325-
dc.citation.journaltitleScience-
dc.identifier.wosid000309215400041-
dc.identifier.scopusid2-s2.0-84866753558-
dc.citation.endpage1644-
dc.citation.number6102-
dc.citation.startpage1640-
dc.citation.volume337-
dc.identifier.sci000309215400041-
dc.description.isOpenAccessY-
dc.contributor.affiliatedAuthorKim, Dae-Hyeong-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusCRYSTALLINE SILICON-
dc.subject.keywordPlusSILK FIBROIN-
dc.subject.keywordPlusWATER-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusOXIDE-
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  • College of Engineering
  • School of Chemical and Biological Engineering
Research Area Materials Science

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