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Improved diffusion barrier by stuffing the grain boundaries of TIN with a thin A1 interlayer for Cu metallization : A1 중간층을 이용하여 TiN 결정립계를 충진한 Cu 배선공정을 위한 확산방지막에 관한 연구

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dc.contributor.advisor김기범-
dc.contributor.author남기태-
dc.date.accessioned2010-01-15T02:32:40Z-
dc.date.available2010-01-15T02:32:40Z-
dc.date.copyright2002.-
dc.date.issued2002-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000061996eng
dc.identifier.urihttps://hdl.handle.net/10371/30334-
dc.descriptionThesis (master`s)--서울대학교 대학원 :재료공학부,2002.en
dc.format.extentvii, 77 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.titleImproved diffusion barrier by stuffing the grain boundaries of TIN with a thin A1 interlayer for Cu metallizationen
dc.title.alternativeA1 중간층을 이용하여 TiN 결정립계를 충진한 Cu 배선공정을 위한 확산방지막에 관한 연구-
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeMasteren
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