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Improved diffusion barrier by stuffing the grain boundaries of TIN with a thin A1 interlayer for Cu metallization : A1 중간층을 이용하여 TiN 결정립계를 충진한 Cu 배선공정을 위한 확산방지막에 관한 연구
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김기범 | - |
dc.contributor.author | 남기태 | - |
dc.date.accessioned | 2010-01-15T02:32:40Z | - |
dc.date.available | 2010-01-15T02:32:40Z | - |
dc.date.copyright | 2002. | - |
dc.date.issued | 2002 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000061996 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/30334 | - |
dc.description | Thesis (master`s)--서울대학교 대학원 :재료공학부,2002. | en |
dc.format.extent | vii, 77 leaves | en |
dc.language.iso | en | en |
dc.publisher | 서울대학교 대학원 | en |
dc.title | Improved diffusion barrier by stuffing the grain boundaries of TIN with a thin A1 interlayer for Cu metallization | en |
dc.title.alternative | A1 중간층을 이용하여 TiN 결정립계를 충진한 Cu 배선공정을 위한 확산방지막에 관한 연구 | - |
dc.type | Thesis | - |
dc.contributor.department | 재료공학부 | - |
dc.description.degree | Master | en |
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