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Homoepitaxial growth and in-situ doping of monocrystalline alpha-SiC thin films by MOCVD for power device applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 김형준 | - |
| dc.contributor.author | 정재경 | - |
| dc.date.accessioned | 2010-01-17T02:12:29Z | - |
| dc.date.available | 2010-01-17T02:12:29Z | - |
| dc.date.copyright | 2002. | - |
| dc.date.issued | 2002 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000062871 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/35410 | - |
| dc.description | Thesis (doctoral)--서울대학교 대학원 :재료공학부,2002. | en |
| dc.format.extent | xvii, 192 leaves | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | 6H-SiC | en |
| dc.subject | 4H-SiC | en |
| dc.subject | Homoepitaxial growth | en |
| dc.subject | BTMSM | en |
| dc.subject | Porous substrate | en |
| dc.title | Homoepitaxial growth and in-situ doping of monocrystalline alpha-SiC thin films by MOCVD for power device applications | en |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | en |
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