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Growth and characterization of inGaN quantum well structures for light emitting diode and laser diode applications
InGaN 양자우물구조 성장 및 특성평가에 관한 연구

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Authors
여환국
Advisor
윤의준
Issue Date
2002
Publisher
서울대학교 대학원
Keywords
InGaNGaNMOCVDMultiple quantum wellwell number
Description
Thesis (doctoral)--서울대학교 대학원 :재료공학부,2002.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000060843

http://hdl.handle.net/10371/35434
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
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