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Growth and characterization of inGaN quantum well structures for light emitting diode and laser diode applications : InGaN 양자우물구조 성장 및 특성평가에 관한 연구
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2002
- Publisher
- 서울대학교 대학원
- Keywords
- InGaN ; GaN ; MOCVD ; Multiple quantum well ; well number
- Description
- Thesis (doctoral)--서울대학교 대학원 :재료공학부,2002.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000060843
https://hdl.handle.net/10371/35434
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