SHERP

UHV-CVD와 UHV-ECRCVD를 利用한 多結晶 Si[1-x]Ge[x] 薄膜의 蒸着에 관한 硏究
A Study on the polycrystalline Si[1-x]Ge[x] thin films grown by ultrahigh vacuum chemical vapor deposition and ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

Cited 0 time in webofscience Cited 0 time in scopus
Authors
박진원
Advisor
윤의준
Issue Date
2001
Publisher
서울대학교 대학원
Keywords
게이트UHV-CVDMOS캐패시터UHV-ECRCVDUHV-CVDgate다결정 SiGepolycrystalline SiGeMOs capacitor
Description
학위논문(박사)--서울대학교 대학원 :재료공학부,2001.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063457

http://hdl.handle.net/10371/35509
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Material Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse