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Modeling of stress effects in MOSFET devices
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 박영준 | - |
dc.contributor.author | Sokolov Alexey | - |
dc.date.accessioned | 2010-01-26T15:37:08Z | - |
dc.date.available | 2010-01-26T15:37:08Z | - |
dc.date.copyright | 2008. | - |
dc.date.issued | 2008 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042264 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/45025 | - |
dc.description | Thesis(masters) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.8. | en |
dc.format.extent | 115 leaves | en |
dc.language.iso | en | en |
dc.publisher | 서울대학교 대학원 | en |
dc.subject | strained silicon | en |
dc.subject | strained silicon | en |
dc.subject | 6 band kp method | en |
dc.subject | 6 band kp method | en |
dc.subject | effective mass under stress | en |
dc.subject | effective mass under stress | en |
dc.subject | valence band edge shifts | en |
dc.subject | valence band edge shifts | en |
dc.subject | conduction band edge shifts | en |
dc.subject | conduction band edge shifts | en |
dc.subject | triangular potential well | en |
dc.subject | triangular potential well | en |
dc.title | Modeling of stress effects in MOSFET devices | en |
dc.type | Thesis | - |
dc.contributor.department | 전기. 컴퓨터공학부 | - |
dc.description.degree | Master | en |
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