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ICP-CVD 공정을 이용한 저온(150℃)SiO₂절연막의 전기적 특성연구

DC Field Value Language
dc.contributor.advisor한민구-
dc.contributor.author강수혁-
dc.date.accessioned2010-01-27T14:46:45Z-
dc.date.available2010-01-27T14:46:45Z-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000054318kog
dc.identifier.urihttps://hdl.handle.net/10371/45594-
dc.description학위논문(석사)--서울대학교 대학원 :전기·컴퓨터공학부,2004.ko
dc.format.extentiv, 58 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject다결정 실리콘 박막 트랜지스터ko
dc.subjectPoly-si tftko
dc.subject게이트 산화막ko
dc.subjectIcp-cvdko
dc.subject엑시머 레이저 어닐링ko
dc.subjectSilicon dioxideko
dc.subjectGate insulatorko
dc.subjectExcimer laser annealingko
dc.subjectPre-oxidationko
dc.titleICP-CVD 공정을 이용한 저온(150℃)SiO₂절연막의 전기적 특성연구ko
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeMasterko
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