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Analysis of RTS Noise and Cell Characteristics in Flash Memory Having Floating-Gate
Floating Gate를 갖는 Flash Memory에서 RTS Noise 및 Cell특성의 분석

DC Field Value Language
dc.contributor.advisor신형철-
dc.contributor.author강대웅-
dc.date.accessioned2010-01-29T06:09:27Z-
dc.date.available2010-01-29T06:09:27Z-
dc.date.copyright2009.-
dc.date.issued2009-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000036079eng
dc.identifier.urihttp://hdl.handle.net/10371/46857-
dc.descriptionThesis(doctors) --서울대학교 대학원 :전기. 컴퓨터공학부, 2009.2.en
dc.format.extent119 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject랜덤노인즈en
dc.subjectRTSnoiseen
dc.subject플래쉬메모리en
dc.subjectflashen
dc.subject낸드플래쉬메모리en
dc.subjectNANDen
dc.subject공기층스페이서en
dc.subjectairen
dc.subject트랩en
dc.subjectgapen
dc.subject위치en
dc.subjectsinen
dc.subjecttrapen
dc.subjectlocationen
dc.titleAnalysis of RTS Noise and Cell Characteristics in Flash Memory Having Floating-Gateen
dc.title.alternativeFloating Gate를 갖는 Flash Memory에서 RTS Noise 및 Cell특성의 분석en
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeDoctoren
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Ph.D. / Sc.D._전기·정보공학부)
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