SHERP

Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metal-organic solution decomposition

Cited 0 time in webofscience Cited 133 time in scopus
Authors
Chon, Uong; Yi, Gyu-Chul; Jang, Hyun M.
Issue Date
2001-01-29
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 78, 658 (2001)
Keywords
BISMUTH TITANATEMEMORIESDEPOSITION
Abstract
Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 degreesC were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P(r)) and the coercive field (E-c) were in the range of 26-28 muC/cm(2) and 50-75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5x10(10) read/write switching cycles at a frequency of 1 MHz. (C) 2001 American Institute of Physics.
ISSN
0003-6951 (print)
1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/4834

http://link.aip.org/link/?APPLAB/78/658/1
DOI
https://doi.org/10.1063/1.1333686

https://doi.org/10.1063/1.1333686
Files in This Item:
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse