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Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metal-organic solution decomposition

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dc.contributor.authorChon, Uong-
dc.contributor.authorYi, Gyu-Chul-
dc.contributor.authorJang, Hyun M.-
dc.date.accessioned2009-06-23T01:16:22Z-
dc.date.available2009-06-23T01:16:22Z-
dc.date.issued2001-01-29-
dc.identifier.citationAppl. Phys. Lett. 78, 658 (2001)en
dc.identifier.issn0003-6951 (print)-
dc.identifier.issn1077-3118 (online)-
dc.identifier.urihttp://hdl.handle.net/10371/4834-
dc.identifier.urihttp://link.aip.org/link/?APPLAB/78/658/1-
dc.description.abstractFatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 degreesC were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P(r)) and the coercive field (E-c) were in the range of 26-28 muC/cm(2) and 50-75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5x10(10) read/write switching cycles at a frequency of 1 MHz. (C) 2001 American Institute of Physics.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.subjectBISMUTH TITANATEen
dc.subjectMEMORIESen
dc.subjectDEPOSITIONen
dc.titleFatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metal-organic solution decompositionen
dc.typeArticleen
dc.contributor.AlternativeAuthor이규철-
dc.contributor.AlternativeAuthor전웅-
dc.identifier.doi10.1063/1.1333686-
dc.identifier.doi10.1063/1.1333686-
dc.citation.journaltitleApplied Physics Letters-
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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