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Fatigue-free samarium-modified bismuth titanate film capacitors having large spontaneous polarizations

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Authors
Chon, Uong; Kim, Ki-Bum; Jang, Hyun M.; Yi, Gyu-Chul
Issue Date
2001-11-05
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 79, 3137 (2001)
Keywords
FERROELECTRIC CAPACITORS; ELECTRICAL-PROPERTIES; THIN-FILMS; HETEROSTRUCTURES; RETENTION; MEMORIES
Abstract
Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metalorganic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P(r)) and the nonvolatile charge as compared to those of the Bi4-xLaxTi3O12 (x=0.75) film capacitor, recently known as the most promising candidate for nonvolatile memories. The 2P(r) value of the BSmT capacitor was 49 muC/cm(2) at an applied voltage of 10 V while the net nonvolatile switching charge was as high as 20 muC/cm(2) and remained essentially constant up to 4.5x10(10) read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 17 muC/cm(2) and a strong resistance against the imprinting failure. (C) 2001 American Institute of Physics.
ISSN
0003-6951 (print)1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/4836
http://link.aip.org/link/?APPLAB/79/3137/1
DOI
https://doi.org/10.1063/1.1415353
https://doi.org/10.1063/1.1415353
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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