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Fatigue-free samarium-modified bismuth titanate film capacitors having large spontaneous polarizations
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chon, Uong | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.contributor.author | Jang, Hyun M. | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2009-06-23T03:40:33Z | - |
dc.date.available | 2009-06-23T03:40:33Z | - |
dc.date.issued | 2001-11-05 | - |
dc.identifier.citation | Appl. Phys. Lett. 79, 3137 (2001) | en |
dc.identifier.issn | 0003-6951 (print) | - |
dc.identifier.issn | 1077-3118 (online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/4836 | - |
dc.identifier.uri | http://link.aip.org/link/?APPLAB/79/3137/1 | - |
dc.description.abstract | Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metalorganic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2P(r)) and the nonvolatile charge as compared to those of the Bi4-xLaxTi3O12 (x=0.75) film capacitor, recently known as the most promising candidate for nonvolatile memories. The 2P(r) value of the BSmT capacitor was 49 muC/cm(2) at an applied voltage of 10 V while the net nonvolatile switching charge was as high as 20 muC/cm(2) and remained essentially constant up to 4.5x10(10) read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge-retention characteristics with its sensing margin of 17 muC/cm(2) and a strong resistance against the imprinting failure. (C) 2001 American Institute of Physics. | en |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics | en |
dc.subject | FERROELECTRIC CAPACITORS | en |
dc.subject | ELECTRICAL-PROPERTIES | en |
dc.subject | THIN-FILMS | en |
dc.subject | HETEROSTRUCTURES | en |
dc.subject | RETENTION | en |
dc.subject | MEMORIES | en |
dc.title | Fatigue-free samarium-modified bismuth titanate film capacitors having large spontaneous polarizations | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 김기범 | - |
dc.contributor.AlternativeAuthor | 전웅 | - |
dc.identifier.doi | 10.1063/1.1415353 | - |
dc.identifier.doi | 10.1063/1.1415353 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
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