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ICP RIE를 이용한 GaAs p-HEMT 성능 향상에 관한 연구

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author이진식-
dc.date.accessioned2010-02-02T07:10:43Z-
dc.date.available2010-02-02T07:10:43Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041220kog
dc.identifier.urihttps://hdl.handle.net/10371/48381-
dc.description학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.2ko
dc.format.extent49 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject가스피헴트ko
dc.subjectGaAs p-HEMTko
dc.subject소스저항ko
dc.subjectRsko
dc.subject트랜스컨덕턴스ko
dc.subjectgmko
dc.subject인듐갈륨포스파이드ko
dc.subjectInGaPko
dc.subject플라즈마ko
dc.subjectInGaAs HEMTko
dc.subjectICP plasma etcherko
dc.titleICP RIE를 이용한 GaAs p-HEMT 성능 향상에 관한 연구ko
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeMasterko
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