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Photoluminescent Properties of ZnO Thin Films Grown on SiO2(100)/Si by Metal-Organic Chemical Vapor Deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2009-06-23T03:52:50Z | - |
dc.date.available | 2009-06-23T03:52:50Z | - |
dc.date.issued | 2001 | - |
dc.identifier.citation | Journal of Electronic Materials, 30, L32(2001) | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://hdl.handle.net/10371/4842 | - |
dc.description.abstract | We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400 degreesC. From the PL spectra of the films at 10-300 K, strong PL peaks due to fi-ee and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the ZnO films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm(2), a strong, sharp peak was observed at 3.181 eV. | en |
dc.language.iso | en | en |
dc.publisher | Springer Verlag | - |
dc.publisher | The Minerals, Metals & Materials Society (TMS) | - |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | - |
dc.subject | ZnO | en |
dc.subject | metal organic chemical vapor deposition (MOCVD) | en |
dc.subject | photoluminescence | en |
dc.subject | SiO2/Si substrate | en |
dc.subject | stimulated emission | en |
dc.title | Photoluminescent Properties of ZnO Thin Films Grown on SiO2(100)/Si by Metal-Organic Chemical Vapor Deposition | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 박원일 | - |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.identifier.doi | 10.1007/s11664-001-0127-7 | - |
dc.identifier.doi | 10.1007/s11664-001-0127-7 | - |
dc.citation.journaltitle | Journal of Electronic Materials | - |
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