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Photoluminescent Properties of ZnO Thin Films Grown on SiO2(100)/Si by Metal-Organic Chemical Vapor Deposition

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dc.contributor.authorPark, Won Il-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2009-06-23T03:52:50Z-
dc.date.available2009-06-23T03:52:50Z-
dc.date.issued2001-
dc.identifier.citationJournal of Electronic Materials, 30, L32(2001)-
dc.identifier.issn0361-5235-
dc.identifier.urihttps://hdl.handle.net/10371/4842-
dc.description.abstractWe report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400 degreesC. From the PL spectra of the films at 10-300 K, strong PL peaks due to fi-ee and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the ZnO films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm(2), a strong, sharp peak was observed at 3.181 eV.en
dc.language.isoenen
dc.publisherSpringer Verlag-
dc.publisherThe Minerals, Metals & Materials Society (TMS)-
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)-
dc.subjectZnOen
dc.subjectmetal organic chemical vapor deposition (MOCVD)en
dc.subjectphotoluminescenceen
dc.subjectSiO2/Si substrateen
dc.subjectstimulated emissionen
dc.titlePhotoluminescent Properties of ZnO Thin Films Grown on SiO2(100)/Si by Metal-Organic Chemical Vapor Depositionen
dc.typeArticleen
dc.contributor.AlternativeAuthor박원일-
dc.contributor.AlternativeAuthor이규철-
dc.identifier.doi10.1007/s11664-001-0127-7-
dc.identifier.doi10.1007/s11664-001-0127-7-
dc.citation.journaltitleJournal of Electronic Materials-
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