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Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods

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Authors
Park, Won Il; Kim, D. H.; Jung, S.-W.; Yi, Gyu-Chul
Issue Date
2002-01-03
Publisher
American Institute of Physics
Citation
Appl. Phys. Lett. 80, 4232 (2002)
Keywords
ULTRAVIOLET-LASER EMISSION; ROOM-TEMPERATURE; THIN-FILMS; NANOWIRES; NANOTUBES; ARRAYS
Abstract
We report metalorganic vapor-phase epitaxial growth and structural and photoluminescent characteristics of ZnO nanorods. The nanorods were grown on Al2O3(00.1) substrates at 400 degreesC without employing any metal catalysts usually needed in other methods. Electron microscopy revealed that nanorods with uniform distributions in their diameters, lengths, and densities were grown vertically from the substrates. The mean diameter of the nanorods is as narrow as 25 nm. In addition, x-ray diffraction measurements clearly show that ZnO nanorods were grown epitaxially with homogeneous in-plane alignment as well as a c-axis orientation. More importantly, from photoluminescence spectra of the nanorods strong and narrow excitonic emission and extremely weak deep level emission were observed, indicating that the nanorods are of high optical quality. (C) 2002 American Institute of Physics.
ISSN
0003-6951 (print)1077-3118 (online)
Language
English
URI
http://hdl.handle.net/10371/4853
http://link.aip.org/link/?APPLAB/80/4232/1
DOI
https://doi.org/10.1063/1.1482800
https://doi.org/10.1063/1.1482800
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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