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(A)Statistical method for reliability of tunneling oxide in the flash memory : Flash 메모리의 터널링 산화막 신뢰성 예측을 위한 통계적 방법
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- Authors
- Advisor
- 박영준
- Issue Date
- 2006
- Publisher
- 서울대학교 대학원
- Keywords
- 신뢰성 ; reliability ; 플래쉬메모리 ; flash memory ; retention ; retention ; stress induced leakage current ; stress induced leakage current ; 산화막 트랩 ; oxide trap ; dispersive transport ; dispersive transport ; 공간분포 ; spatial distribution
- Description
- Thesis(doctoral)--서울대학교 대학원 :전기. 컴퓨터공학부,2006.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000048781
https://hdl.handle.net/10371/48531
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