Publications
Detailed Information
Laser-MBE growth of high-quality ZnO thin films on Al2O3(00.1) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser
DC Field | Value | Language |
---|---|---|
dc.contributor.author | An, S.-J. | - |
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.contributor.author | Cho, S. | - |
dc.date.accessioned | 2009-06-23T04:37:32Z | - |
dc.date.available | 2009-06-23T04:37:32Z | - |
dc.date.issued | 2002-04 | - |
dc.identifier.citation | Appl. Phys. A 74, 509-512 (2002) | en |
dc.identifier.issn | 0947-8396 (print) | - |
dc.identifier.issn | 1432-0630 (online) | - |
dc.identifier.uri | https://hdl.handle.net/10371/4858 | - |
dc.description.abstract | High-quality ZnO thin films were grown on single-crystalline Al2O3(0001) and amorphous SiO2/Si(100) substrates at 400-640degreesC using laser molecular beam epitaxy. For film growth, the third harmonics of a pulsed Nd:YAG laser were illuminated on a ZnO target. The ZnO films were epitaxially grown on Al2O3(0001) with the narrow X-ray diffraction full width at half maximum (FWHM) of 0.04degrees and the films on SiO2/Si(100) exhibited a preferred c-axis orientation. Furthermore, the films exhibited excellent optical properties in photoluminescence (PL) measurements with very sharp excitonic and weak deep-level emission peaks. At 15 K, PL FWHM values of the films grown on Al2O3 (0001) and SiO2/Si(100) were 3 and 18 meV, respectively. | en |
dc.language.iso | en | en |
dc.publisher | Springer Verlag | en |
dc.subject | MOLECULAR-BEAM EPITAXY | en |
dc.subject | DEPOSITION | en |
dc.subject | SAPPHIRE | en |
dc.subject | HETEROEPITAXY | en |
dc.subject | TEMPERATURE | en |
dc.subject | SPECTRA | en |
dc.title | Laser-MBE growth of high-quality ZnO thin films on Al2O3(00.1) and SiO2/Si(100) using the third harmonics of a Nd:YAG laser | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 이규철 | - |
dc.contributor.AlternativeAuthor | 박원일 | - |
dc.identifier.doi | 10.1007/s003390101035 | - |
dc.identifier.doi | 10.1007/s003390101035 | - |
dc.citation.journaltitle | Applied Physics A: Materials Science & Processing | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.