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Synthesis and characterization of high-quality In2O3 nanobelts via catalyst-free growth using a simple physical vapor deposition at low temperature

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Authors
Jeong, J.S.; Lee, J.Y.; Lee, C.J.; An, S.J.; Yi, Gyu-Chul
Issue Date
2004-01-26
Publisher
Elsevier
Citation
Chem. Phys. Lett. 384 (2004) 246
Keywords
ZINC-OXIDE NANOWIRES; PHOTOLUMINESCENCE; COMPOSITES; NANOTUBES; TRANSPORT; FILMS; ROUTE
Abstract
High-quality indium oxide (In2O3) nanobelts were successfully synthesized without catalyst at low temperature ranged from 600 to 850 degreesC using a simple physical vapor deposition. To synthesize the In2O3 nanobelts, we employed a simple reaction of thermally evaporated indium vapor in a wet oxidizing environment. The In2O3 nanobelts have diameters in the range of 20-200 nm and lengths over several hundreds micrometer. The synthesized nanobelts indicate high-purity and single-crystalline cubic structure. Most of In2O3 nanobelts have (100) growth direction but some nanobelts have (110) growth direction. Photoluminescence spectra under excitation at 325 nm showed a strong and broad emission at 570 nm with a shoulder at 630 nm related to oxygen vacancies. We suggest that the synthesis of the In2O3 nanobelts follows the self-assisted growth mechanism in our method. (C) 2003 Published by Elsevier B.V.
ISSN
0009-2614
Language
English
URI
http://hdl.handle.net/10371/4897
DOI
https://doi.org/10.1016/j.cplett.2003.12.027
https://doi.org/10.1016/j.cplett.2003.12.027
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College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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